semihow rev.a0, december 2014 HRP80N08K bv dss = 80 v r ds(on) typ = 6.7m i d = 120 a features HRP80N08K 80v n - channel trench mosfet ? originative new design ? superior avalanche rugged technology ? excellent switching characteristics ? unrivalled gate charge : 60nc (typ.) ? extended safe operating area ? lower r ds(on) : 6.7 m (typ.) @v gs =10v ? 100 % avalanche tested december 2014 1.gate 2. drain 3. source 2 1 3 to- 220 absolute maximum ratings t c =25 unless otherwise specified thermal resistance characteristics symbol parameter value units v dss drain - source voltage 80 v i d drain current ? continuous (t c = 25 ) 120 a drain current ? continuous (t c = 100 ) 84 a i dm drain current ? pulsed (note 1) 420 a v gs gate - source voltage 25 v e as single pulsed avalanche energy (note 2) 500 mj e ar repetitive avalanche energy (note 1) 23 mj p d power dissipation (t c = 25 ) - derate above 25 230 w 1.53 w/ t j , t stg operating and storage temperature range - 55 to +175 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jc junction -to - case -- 0.65 /w r cs case -to - sink 0.5 -- r ja junction -to - ambient -- 62.5
semihow rev.a0, december 2014 HRP80N08K electrical characteristics t j =25 c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source - drain diode forward current -- -- 120 a i sm pulsed source - drain diode forward current -- -- 420 v sd source - drain diode forward voltage i s = 30 a, v gs = 0 v -- -- 1.3 v trr reverse recovery time i s = 30 a, v gs = 0 v di f / dt = 100 a/ s -- 65 -- ? qrr reverse recovery charge -- 110 -- nc on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 80 -- -- v i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v -- -- 1 ? v ds = 64 v, t j = 125 -- -- 100 ? i gss gate - body leakage current v gs = 25 v, v ds = 0 v -- -- 100 ? off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2900 -- ? c oss output capacitance -- 500 -- ? c rss reverse transfer capacitance -- 190 -- ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 0.7 -- ? dynamic characteristics t d(on) turn - on time v ds = 40 v, i d = 30 a, r g = 6 ? -- 40 -- ? t r turn - on rise time -- 40 -- ? t d(off) turn - off delay time -- 130 -- ? t f turn - off fall time -- 35 -- ? q g total gate charge v ds = 64 v, i d = 30 a, v gs = 10 v -- 60 -- nc q gs gate - source charge -- 13 -- nc q gd gate - drain charge -- 16 -- nc switching characteristics source - drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 ? 2.2 -- 3.8 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 40 a -- 6.7 8.0 m? g fs forward transconductance v ds = 20, i d = 40 a -- 70 -- s notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=1mh, i as =25a , v dd =30v , r g =25 ? , starting t j =25 c
semihow rev.a0, december 2014 HRP80N08K typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 20 40 60 80 0 2 4 6 8 10 12 v ds = 64v i d = 30v v gs , gate-source voltage [v] q g , total gate charge [nc] 0 40 80 120 160 200 240 280 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs = 10v ? note : t j = 25 o c r ds(on) [m ? ], drain-source on-resistance i d , drain current [a] 10 0 10 1 10 1 10 2 v gs top : 15 v 10 v 8 v 7 v 6 v 5.5 v 5 v bottom : 4.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 2 4 6 8 10 0.1 1 10 100 25 o c * notes : 1. v ds = 20v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 175 o c 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 175 o c
semihow rev.a0, december 2014 HRP80N08K typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] t 2 t 1 p dm 25 50 75 100 125 150 175 0 30 60 90 120 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.65 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 ? note : 1. v gs = 10 v 2. i d = 40 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? note : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c]
semihow rev.a0, december 2014 HRP80N08K fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d
semihow rev.a0, december 2014 HRP80N08K fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0, december 2014 HRP80N08K package dimension 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ to - 220 (a)
semihow rev.a0, december 2014 HRP80N08K 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3.84 0.20 2.54typ 2.54typ to - 220 (b) package dimension
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